SINGLE-CRYSTAL SI NISI2 SI(100) STRUCTURES

Citation
Rt. Tung et al., SINGLE-CRYSTAL SI NISI2 SI(100) STRUCTURES, Journal of applied physics, 73(12), 1993, pp. 8250-8257
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
73
Issue
12
Year of publication
1993
Pages
8250 - 8257
Database
ISI
SICI code
0021-8979(1993)73:12<8250:SSNSS>2.0.ZU;2-J
Abstract
High-quality, uniform, Si/NiSi2/Si(100) structures were demonstrated b y a combination of molecular-beam epitaxy and postgrowth, high-tempera ture annealing. A Si template technique ensures the epitaxial orientat ion of the Si overlayer. The unusual inverse Volmer-Weber mode observe d during the growth of Si on NiSi2(100) is shown to be a result of int erface and surface energetics. The evolution of the interface morpholo gy of the double-heteroepitaxial structures is discussed in terms of t hermodynamics.