SINGLE-CRYSTAL SI NISI2 SI(100) STRUCTURES

High-quality, uniform, Si/NiSi2/Si(100) structures were demonstrated b y a combination of molecular-beam epitaxy and postgrowth, high-tempera ture annealing. A Si template technique ensures the epitaxial orientat ion of the Si overlayer. The unusual inverse Volmer-Weber mode observe d during the growth of Si on NiSi2(100) is shown to be a result of int erface and surface energetics. The evolution of the interface morpholo gy of the double-heteroepitaxial structures is discussed in terms of t hermodynamics.