FABRICATION OF HIGH-MOBILITY 2-DIMENSIONAL ELECTRON AND HOLE GASES INGESI SI/

A procedure for the fabrication of two-dimensional carrier (electron a nd hole) gases in modulation doped GeSi/Si heterostructures is present ed, The best 4.2 K mobilities measured for the two-dimensional electro n and hole gases are 180 000 cm2/V s and 18 000 cm2/V s, respectively. Recently, two-dimensional hole gases with mobilities as high as 55 00 0 cm2/V S have been obtained. The carrier gases are fabricated on top of relaxed, compositionally graded GexSi1-x. buffer layers with low th reading dislocation densities (almost-equal-to 10(6) cm-2). Experiment al evidence indicates that the function of the graded buffer is to pro mote dislocation propagation while suppressing nucleation. A comparati ve analysis is carried out for two dimensional electron gases in GeSi/ Si/GeSi and in AlGaAs/GaAs structures. Although molecular beam epitaxy is used to grow the samples, the principle discussed here is independ ent of growth technique.