GROWTH OF HIGH-T(C) YBA2CU3OY FILMS WITH AN OFF-AXIS SPUTTERING CONFIGURATION

Using an off-axis rf sputtering configuration, we have prepared in sit u high-T(c) YBa2Cu3O7-y (YBCO) films with a relatively large depositio n rate. The sputtering gas was a mixture of Ar and O2 (7:3) and the su bstrates were MgO(100) and SrTiO3 (100). We found that the distance fr om the target to the substrate, d, is a key factor in the deposition r ate. By decreasing d to a value of about 1.5-2.5 cm, we obtained a dep osition rate as great as 2000-2500 angstrom per hour with an rf power of 120 W and at a total pressure 100-200 mTorr. The transport behavior s of the as-grown YBCO films under magnetic fields are reported. The a ctivation energy derived from the resistive transition in magnetic fie lds is thickness dependent.