SEQUENTIAL TUNNELING VERSUS RESONANT-TUNNELING IN A DOUBLE-BARRIER DIODE

Authors
Citation
Ym. Hu et S. Stapleton, SEQUENTIAL TUNNELING VERSUS RESONANT-TUNNELING IN A DOUBLE-BARRIER DIODE, Journal of applied physics, 73(12), 1993, pp. 8633-8636
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
73
Issue
12
Year of publication
1993
Pages
8633 - 8636
Database
ISI
SICI code
0021-8979(1993)73:12<8633:STVRIA>2.0.ZU;2-8
Abstract
The proposed sequential tunneling model predicts that the negative dif ferential resistance in a double-barrier diode (DBD) can exist indepen dent of a resonant Fabry-Perot effect. The proof is based on the exist ence of quasi-two-dimensional states for electrons in the quantum well . However, we find that existence of the quasi-two-dimensional states depends on a Fabry-Perot resonance. Therefore, if coherence of electro ns in the quantum well is completely lost, then the quasi-two-dimensio nal states will also disappear. We find that the damped Fabry-Perot mo del can provide a unified formula for electron transport in the DBD fr om pure coherent tunneling to pure incoherent tunneling. In the latter case, the negative differential resistance disappears.