INTERDIFFUSION OF GAAS GA1-XINXAS QUANTUM-WELLS/

We report results of an investigation of interdiffusion in GaAs/Ga0.82 In0.18As strained single quantum wells. Wells of width 12-100 angstrom , grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830-950-degrees-C, and shifts in the electron -to-heavy-hole transition energies were detected by 4 K photoluminesce nce. We employed a powerful computer model to relate postdiffusion wel l shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1 x 10(-16)-2 x 10(-14) cm2 /s and activation energies of 3.1-3.8 eV were obtained.