DEFECT STRUCTURE FORMATION IN SILICON ON GRINDING

X-ray analysis, ESR, and IR spectroscopy have been applied to the defe ct structures in silicon particles made by various dispersal methods a t room temperature. A silicon particle can contain a slightly deformed core, a subsurface highly defective layer (this is made up of coheren t-scattering regions with layers of amorphized material at the contact s), and a surface layer in which there is oxidized silicon and adsorbe d oxygen. The model of crushing determines whether the indiviidual par ticles form aggregates of various sizes.