ELECTRICALLY CONDUCTING POLY[DIALKOXY-BIS(2-THIENYL)SILANE]

The dimethylsilylene moiety was almost eliminated during the chemical polymerization of dimethyl-bis(2-thienyl)silane (MTS) with iron(III) c hloride. On the other hand, the polymerization of diethoxy-bis(2-thien yl)silane (EOTS) with iron(III) chloride produced poly[diethoxy-bis(2- thienyl)silane] without eliminating the diethoxysilylene moiety. Poly- EOTS was doped with iodine without causing irreversible reaction. Elec trical conductivity was 2.1x10(-1) Scm-1. Diethoxy-bis[2-(3-dodecylthi enyl)]silane (EODTS) was also polymerized with iron(III) chloride and poly-EODTS was soluble in organic solvents. The ESCA analysis of its f ilm indicated that it contained silicon as well as sulfur. Poly[diocty loxy-bis(2-thienyl)silane] (poly-OOTS) was prepared by the coupling of dichlorodioctyloxysilane with 5,5'-dilithio-2,2'-bithiophene and its spectra were measured. These results indicate that the introduction of alkoxy groups on silicon atoms leads to high durability to oxidation and reduction without decreasing mobility of charge-carriers along the polymer chain.