MINORITY-CARRIER DIFFUSION LENGTHS FOR HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS

Authors
BUTCHER KSA ALEXIEV D TANSLEY TL
Citation
Ksa. Butcher et al., MINORITY-CARRIER DIFFUSION LENGTHS FOR HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS, Australian journal of physics, 46(2), 1993, pp. 317-325
Citations number
25
Categorie Soggetti
Physics
Journal title
Australian journal of physics → ACNP
ISSN journal
00049506
Volume
46
Issue
2
Year of publication
1993
Pages
317 - 325
Database
ISI
SICI code
0004-9506(1993)46:2<317:MDLFHL>2.0.ZU;2-P
Abstract
Measurements of minority carrier diffusion lengths for p-type and n-ty pe GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The dif fusion lengths measured for high purity p-type and n-type LPE-GaAs sam ples were observed to be longer than any previously reported.