Miniature, etching ridge InGaAsP/InP Phase Modulator with highly effic
ient phase shifting efficiency of 60-degrees/V.mm and 43-degrees/V.mm
for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.
52 mum are reported. It is well suited for integrated opto-electronics
. Some functions depending on bandwidth of the devices are discussed.