Stress in reactively sputter-deposited NbCxN1-x films was measured. It
was found that the stress in NbCxN1-x films strongly depended on the
total sputtering gas pressure Pt. Films deposited at P(t) greater-than
-or-equal-to 2.0 Pa had very small stress values (<2.0 X 10(8) Pa). On
the other hand, films deposited at P(t) less-than-or-equal-to 1.1 Pa
had large compressive stress values. The results of X-ray diffraction
measurements showed that the stress in NbCxN1-x films was strongly rel
ated to the ratio of (111) and (200) grains in the films. We also obse
rved the surface morphology of deposited films by scanning electron mi
croscopy and found that the stress in deposited films is affected by t
he microstructure of the films.