STRESS IN NBCXN1-X FILMS PREPARED BY REACTIVE RF MAGNETRON SPUTTERING

Stress in reactively sputter-deposited NbCxN1-x films was measured. It was found that the stress in NbCxN1-x films strongly depended on the total sputtering gas pressure Pt. Films deposited at P(t) greater-than -or-equal-to 2.0 Pa had very small stress values (<2.0 X 10(8) Pa). On the other hand, films deposited at P(t) less-than-or-equal-to 1.1 Pa had large compressive stress values. The results of X-ray diffraction measurements showed that the stress in NbCxN1-x films was strongly rel ated to the ratio of (111) and (200) grains in the films. We also obse rved the surface morphology of deposited films by scanning electron mi croscopy and found that the stress in deposited films is affected by t he microstructure of the films.