DEFECT LOCALIZATION INDUCED BY HOT-CARRIER INJECTION IN SHORT-CHANNELMOSFETS - CONCEPT, MODELING AND CHARACTERIZATION

Key aspects related to the localization of the hot-carrier induced dam age in short channel MOSFET's are reviewed. Emphasis is put on the ana lysis, modeling and characterization of the degradation of device para meters caused by defects created locally beside the drain junction. Nu merical simulations as well as analytical models predicting the post-s tress performance are presented. compared and their limits of validity highlighted. Relevant experimental results, concerning the evolution of the static characteristics I(D)(V(G), V(D)) during transistor aging , are thoroughly discussed and efficient methods for the extraction of the defective region parameters are proposed. More specific technique s (charge pumping, noise spectroscopy, floating gate current, gated di ode leakage), used for the characterization of aging induced defects, are evaluated from the point of view of their capability to cope with the localized nature of the defects. The merits of silicon on insulato r structures and other technological solutions proposed for the attenu ation of hot carrier effects are briefly commented.