EFFECTS OF RAPID QUENCHING ON THE IMPURITY SITE LOCATION IN ZN-DIFFUSED INP

The lattice locations of Zn atoms in heavily Zn-doped InP single cryst al have been investigated by ion channeling techniques. The InP sample s were rapidly quenched in diffusion pump oil after high-temperature Z n diffusion. Ion channeling experiments performed along various major crystal axes suggest that a large fraction (20%-30%) of the Zn atoms a re in the tetrahedral interstitial position in the InP lattice. It has been found that although the maximum hole concentration is not signif icantly affected by the cooling rate, there is a substantial increase in the incorporation of Zn on substitutional and tetrahedral interstit ial lattice locations in the rapidly cooled samples as compared to the slowly cooled samples. The consequences of these results for understa nding the mechanisms leading to the saturation of the free-hole concen tration in compound semiconductors are discussed.