ELECTRICAL ACTIVATION OF BISMUTH IMPLANTED INTO SILICON BY RAPID THERMAL ANNEALING AND KINETICS OF DEFECTS

The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0 X 10(14) cm-2 at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approxi mately 95% of the Bi dose is found substitutional and 90% is electrica lly active after annealing is performed at 600-degrees-C for times lon ger than 1 min. The electrical activation yield of Bi after RTA at tem peratures greater-than-or-equal-to 700-degrees-C is observed to decrea se when increasing the temperature and time of the annealing process. The data taken from electrical measurements and angular scan across th e [100] axis are evidence that the electrically inactive concentration of the Bi correlates with the concentration of Bi atoms located sligh tly displaced from the crystal rows.