A KINETIC-MODEL FOR AS AND P-INCORPORATION BEHAVIORS IN GAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

A kinetic model has been developed to explain As and P incorporation b ehaviors in GaAs1-xPx epilayers grown on GaAs (001) by gas-source mole cular beam epitaxy. The model can predict the P compositions for vario us substrate temperatures and flow rates. The model shows that an in s itu determination of GaP molar fraction in GaAs1-xPx can be performed by group V-induced intensity oscillations of reflection high-energy-el ectron diffraction at low substrate temperatures where desorption of g roup V species is negligible. At high substrate temperatures the compo sitions can be determined from the arsine and phosphine flow rates.