INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS

Authors
BATOVSKI DA HARDALOV CM
Citation
Da. Batovski et Cm. Hardalov, INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS, Journal of applied physics, 74(1), 1993, pp. 291-295
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
1
Year of publication
1993
Pages
291 - 295
Database
ISI
SICI code
0021-8979(1993)74:1<291:IPFTND>2.0.ZU;2-8
Abstract
A new method for nonexponential deep level transient spectroscopy (DLT S) theoretical analysis is proposed. This method is based on the numer ical solving of the inverse problem for the theoretical model via regu larization algorithms. It is shown that it is possible to obtain the s hape of the deep level energy spectrum from the noisy DLTS spectra in systems with strong disorder.