GENERATION AND ANNIHILATION OF TRAPS IN METAL-OXIDE-SEMICONDUCTOR DEVICES AFTER NEGATIVE AIR CORONA CHARGING

Authors
PRASAD I SRIVASTAVA RS
Citation
I. Prasad et Rs. Srivastava, GENERATION AND ANNIHILATION OF TRAPS IN METAL-OXIDE-SEMICONDUCTOR DEVICES AFTER NEGATIVE AIR CORONA CHARGING, Journal of applied physics, 74(1), 1993, pp. 359-363
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
1
Year of publication
1993
Pages
359 - 363
Database
ISI
SICI code
0021-8979(1993)74:1<359:GAAOTI>2.0.ZU;2-K
Abstract
Surface and bulk traps along with positive oxide charge accumulation h ave been found to be generated in metal-oxide-semiconductor capacitors , when subjected to negative air corona discharge at slightly reduced pressure (congruent-to 10(-1) Torr). The effects are neutralized and d evice quality improved when annealed at 200-degrees-C in air. The bulk traps and a fraction of oxide charges were annealable when kept at ro om temperature for several months. The results have been analyzed by N icollian-Goetzberger's conductance technique and a plausible explanati on is given.