G. Basso et al., SPECTROMETRY OF VERY LONG-CURRENT TRANSIENTS IN ALMOST IDEAL SILICON P-N-JUNCTIONS, Journal of applied physics, 74(1), 1993, pp. 387-396
Proper gettering and annealing processes allow construction of silicon
p-n junctions whose current-voltage characteristic either completely
obeys the Shockley equation (ideal junctions) or, for reverse bias, ha
s three components (almost ideal junctions): a voltage-independent ter
m, which may be much smaller than the diffusion saturation current, a
generation-recombination contribution, and an ohmic component. The las
t two currents are due to defect centers that have the same activation
energy and which are electrically neutral. In preceding works it has
been shown that such an experimental finding may be ascribed to four-s
tate traps, i.e., to defect centers that may be empty of carriers, or
filled by an electron or a hole, or both, and which are created by loc
alized states, with different positions and energy levels, due to the
oxygen. In the present work an experimental system for measuring, at 0
+/-0.05-degrees-C, the current transients produced in almost ideal jun
ctions by changes of the reverse-bias voltage, and an analysis method
for performing the spectrometry of such transients are described. It i
s found that these last a few hours and that they are composed of four
exponential terms whose relaxation times range from tens to a few tho
usands of seconds. Finally, it is shown that such experimental results
also can be ascribed to the preceding defect centers generated by Si(
y)O(x) clusters of a few hundred atoms of oxygen put near the junction
interface, which emit carriers through a tunnel-assisted thermal emis
sion.