EFFECT OF HIGH-ENERGY ION IRRADIATION AND ELECTRON-IRRADIATION ON TEXTURED BI2SR2CACU2OX-180-MEV CU-11-11+ IRRADIATIONS AND 3-MEV ELECTRON-IRRADIATION( AND BR)

180-MeV Cu11+ and Br11+ irradiations and 3-MeV electron irradiation we re carried out on textured Bi-2212 tapes and the effects of irradiatio n on the microstructure and superconducting properties were investigat ed. Ion irradiation, which creates linear tracks, is very effective in increasing both intragrain J(c) and irreversibility field at temperat ures below 60 K when field is parallel to the tracks. At 60 K, an orde r of magnitude higher B(irr) is obtained for both Cu11+ and Br11+ irra diations. Electron irradiation which creates point defects, on the oth er hand, is not as effective as ion irradiation except for low tempera tures of approximately 4.2 K. Apparent pinning potential energy U0 was increased by ion irradiation from approximately 15 to approximately 4 0 meV at 41.8 K, while U0 was unchanged by the electron irradiation. H owever, even U0 of the ion-irradiated sample is still small. This smal l U0 increases flux creep at temperatures above 60 K and makes ion irr adiation less effective. A small increase of transport J(c) was obtain ed by both ion and electron irradiation for small fluences. However, a significant decrease of transport J(c) occurred at fluences which opt imize intragrain J(c).