RECTIFYING CONTACT FORMATION WITH INDIUM ON POLYCRYSTALLINE P-TYPE HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITED DIAMOND UTILIZING MOLECULAR ION-IMPLANTATION

Novel low energy molecular implantation of trimethyl phosphite was use d to make rectifying junctions with indium contacts on boron doped dia mond grown on silicon substrates. Diamond growth utilized hot-filament enhanced chemical vapor deposition (HFCVD). To our knowledge, this is the first report of molecular implantation on diamond and the only im planted junction with HFCVD polycrystalline diamond on silicon as the starting material. The rectifying contacts have high current density i n forward bias and exhibit linear inverse squared capacitance-voltage characteristics at high frequencies, unlike other rectifying diamond j unctions.