LOW-RESISTIVITY INDIUM TIN OXIDE-FILMS BY PULSED-LASER DEPOSITION

Authors
ZHENG JP KWOK HS
Citation
Jp. Zheng et Hs. Kwok, LOW-RESISTIVITY INDIUM TIN OXIDE-FILMS BY PULSED-LASER DEPOSITION, Applied physics letters, 63(1), 1993, pp. 1-3
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
1
Year of publication
1993
Pages
1 - 3
Database
ISI
SICI code
0003-6951(1993)63:1<1:LITOBP>2.0.ZU;2-F
Abstract
Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4 X 10(-4) and 5.6 X 10(-4) OMEGA cm were deposited at substrate temperatures of 310 and 20-degrees-C, respectively. Films with a thick ness of 180 nm had a transmission of nearly 100% for the wavelength ra nge of 600-800 nm.