It is shown that it is possible to deposit thin films with various CF(
x) composition (1.26 less-than-or-equal-to x less-than-or-equal-to 1.8
3) by ion-beam sputtering. These materials with ''teflon-like'' compos
ition have been deposited at room temperature by Ar ion-beam sputterin
g of a teflon target; the film chemical composition has been determine
d by electron spectroscopy for chemical analysis. The fluorine-to-carb
on ratio of the films, as well as their crosslinking degree, is shown
to depend on the energy of the ions impinging on the target.