HIGH-SPEED PHOTORESPONSE IN A REVERSE-BIASED INGAAS INP LASER STRUCTURE AT 1.54 MU-M - EXPERIMENT AND MODELING/

Authors
CHARBONNEAU S AERS GC MCGREER KA DAVIES M LANDHEER D LI ZM DELAGE A DION M TAKASAKI B CONN D MOSS D
Citation
S. Charbonneau et al., HIGH-SPEED PHOTORESPONSE IN A REVERSE-BIASED INGAAS INP LASER STRUCTURE AT 1.54 MU-M - EXPERIMENT AND MODELING/, Applied physics letters, 63(1), 1993, pp. 12-14
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
1
Year of publication
1993
Pages
12 - 14
Database
ISI
SICI code
0003-6951(1993)63:1<12:HPIARI>2.0.ZU;2-T
Abstract
We report extremely efficient (approximately 100% internal quantum eff iciency) and high-speed (approximately 120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 mum. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrie r to the InP cladding contact layer.