SUB-MU-M WIDE CHANNELS WITH SURFACE-POTENTIAL COMPENSATED BY FOCUSED SI ION-BEAM IMPLANTATION

We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-dope d heterostructure that is designed to have no conductive channels at t he heterointerface. The implantation forms a conductive channel separa ted from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-mum to 5 mum wide channels fabricated by 35 keV Si+ ions show a mobility of 5. 3 x 10(5) cm2/V s and a ballistic length of 3.1 mum at 1.5 K.