Ck. Sun et al., FEMTOSECOND GAIN DYNAMICS IN INGAAS ALGAAS STRAINED-LAYER SINGLE-QUANTUM-WELL DIODE-LASERS/, Applied physics letters, 63(1), 1993, pp. 96-98
We report the first investigation of femtosecond gain dynamics in InGa
As/AlGaAs strained-layer single-quantum-well diode lasers using a mult
iple-wavelength pump probe technique. Studies demonstrate that carrier
temperature changes from free-carrier absorption and stimulated trans
itions strongly govern transient gain dynamics. The energy of the pump
wavelength relative to the transparency point determines which proces
ses dominate the transient response. Stimulated carrier cooling is obs
erved for the first time in these materials.