FEMTOSECOND GAIN DYNAMICS IN INGAAS ALGAAS STRAINED-LAYER SINGLE-QUANTUM-WELL DIODE-LASERS/

Authors
SUN CK CHOI HK WANG CA FUJIMOTO JG
Citation
Ck. Sun et al., FEMTOSECOND GAIN DYNAMICS IN INGAAS ALGAAS STRAINED-LAYER SINGLE-QUANTUM-WELL DIODE-LASERS/, Applied physics letters, 63(1), 1993, pp. 96-98
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
1
Year of publication
1993
Pages
96 - 98
Database
ISI
SICI code
0003-6951(1993)63:1<96:FGDIIA>2.0.ZU;2-7
Abstract
We report the first investigation of femtosecond gain dynamics in InGa As/AlGaAs strained-layer single-quantum-well diode lasers using a mult iple-wavelength pump probe technique. Studies demonstrate that carrier temperature changes from free-carrier absorption and stimulated trans itions strongly govern transient gain dynamics. The energy of the pump wavelength relative to the transparency point determines which proces ses dominate the transient response. Stimulated carrier cooling is obs erved for the first time in these materials.