EFFECT OF HYDROGEN TREATMENT UPON SILICON SURFACE INVESTIGATED WITH THE MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY

Multiple internal reflection infrared (MIR-IR) spectroscopy is used to study native oxide on silicon wafers which were annealed at 1200-degr ees-C in a hydrogen ambient. MIR-IR spectra of native oxide are domina ted by a peak at 1230 cm-1, which shifts 10 to 1220 cm-1 for the sampl es of native hydrogen treatment. A mechanism behind the shift is discu ssed according to the central force model, which suggests a 0.8% reduc tion in the distance between silicon atoms in the oxide. It is propose d that the introduction of hydrogen gives rise to a lattice contractio n in the silicon substrate, and in turn, in the native oxide, which ca uses the MIR-IR absorption shift.