ENHANCEMENT OF LOW-TEMPERATURE CRITICAL EPITAXIAL THICKNESS OF SI(100) WITH ION-BEAM SPUTTERING (VOL 62, PG 570, 1993)

Authors
SMITH DL CHEN CC ANDERSON GB HAGSTROM SB
Citation
Dl. Smith et al., ENHANCEMENT OF LOW-TEMPERATURE CRITICAL EPITAXIAL THICKNESS OF SI(100) WITH ION-BEAM SPUTTERING (VOL 62, PG 570, 1993), Applied physics letters, 63(1), 1993, pp. 120-120
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
1
Year of publication
1993
Pages
120 - 120
Database
ISI
SICI code
0003-6951(1993)63:1<120:EOLCET>2.0.ZU;2-R