ELLIPSOMETRIC CHARACTERIZATION OF IN0.52AL0.48AS AND OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES ON INP SUBSTRATES (VOL 62, PG 1411, 1993)

Authors
ALTEROVITZ SA SIEG RM PAMULAPATI J BHATTACHARYA PK
Citation
Sa. Alterovitz et al., ELLIPSOMETRIC CHARACTERIZATION OF IN0.52AL0.48AS AND OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES ON INP SUBSTRATES (VOL 62, PG 1411, 1993), Applied physics letters, 63(1), 1993, pp. 121-121
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
1
Year of publication
1993
Pages
121 - 121
Database
ISI
SICI code
0003-6951(1993)63:1<121:ECOIAO>2.0.ZU;2-N