ION-BEAM-INDUCED SIMULTANEOUS EPITAXIAL-GROWTH OF ALPHA AND CUBIC FESI2 IN SI(100) AT 320-DEGREES-C

Authors
DESIMONI J BEHAR M BERNAS H LIN XW LILIENTALWEBER Z WASHBURN J
Citation
J. Desimoni et al., ION-BEAM-INDUCED SIMULTANEOUS EPITAXIAL-GROWTH OF ALPHA AND CUBIC FESI2 IN SI(100) AT 320-DEGREES-C, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 755-758
Citations number
18
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
755 - 758
Database
ISI
SICI code
0168-583X(1993)80-1:<755:ISEOAA>2.0.ZU;2-7
Abstract
By combining room temperature Fe ion implantation in Si (100) at conce ntrations of 2-18 at.% with 500 keV Si ion beam-induced epitaxial crys tallization at 320-degrees-C, we have simultaneously synthesized the c ubic and the tetragonal FeSi2 phases. Structural characterization was performed by cross-sectional transmission electron microscopy, Rutherf ord backscattering spectroscopy and ion channeling. The epitaxial rela tions to the Si matrix were determined. The results indicate the impor tance of the interfacial energy for the formation of the alpha-phase w hose equilibrium formation temperature is above 950-degrees-C.