J. Desimoni et al., ION-BEAM-INDUCED SIMULTANEOUS EPITAXIAL-GROWTH OF ALPHA AND CUBIC FESI2 IN SI(100) AT 320-DEGREES-C, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 755-758
By combining room temperature Fe ion implantation in Si (100) at conce
ntrations of 2-18 at.% with 500 keV Si ion beam-induced epitaxial crys
tallization at 320-degrees-C, we have simultaneously synthesized the c
ubic and the tetragonal FeSi2 phases. Structural characterization was
performed by cross-sectional transmission electron microscopy, Rutherf
ord backscattering spectroscopy and ion channeling. The epitaxial rela
tions to the Si matrix were determined. The results indicate the impor
tance of the interfacial energy for the formation of the alpha-phase w
hose equilibrium formation temperature is above 950-degrees-C.