ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP

Authors
GASPAROTTO A CARNERA A ARZENTON G TROMBY M PELLEGRINO S VIDIMARI F CALDIRONI M
Citation
A. Gasparotto et al., ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 773-776
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
773 - 776
Database
ISI
SICI code
0168-583X(1993)80-1:<773:IAAOFF>2.0.ZU;2-4
Abstract
We investigated the Fe ion implantation and annealing processes used t o obtain semi-insulating buried layers in InP epitaxial structures for current confinement in laser device applications. SIMS and RBS-channe ling were used as analytical tools. The results show that the annealin g is a rather complicated process when the implant causes sample amorp hization: high surface reactivity, anomalous dopant diffusion and segr egation at damage sites together with inhomogeneous lattice reconstruc tion are observed.