FORMATION OF RELAXED SI1-XGEX LAYERS ON SIMOX BY HIGH-DOSE GE-74 ION-IMPLANTATION

Authors
HOLLANDER B MANTL S MICHELSEN W MESTERS S
Citation
B. Hollander et al., FORMATION OF RELAXED SI1-XGEX LAYERS ON SIMOX BY HIGH-DOSE GE-74 ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 777-780
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
777 - 780
Database
ISI
SICI code
0168-583X(1993)80-1:<777:FORSLO>2.0.ZU;2-A
Abstract
High dose Ge-74 ion implantation into the Si surface layer of SIMOX st ructures has been employed to form strain-relieved Si1-xGex layers on buried, amorphous SiO2. The samples were investigated by Rutherford ba ckscattering spectrometry, He+ ion channeling and transmission electro n microscopy. Ion implantation with an energy of 100 keV and a dose of 3 x 10(17) cm-2 at elevated substrate temperatures followed by rapid thermal annealing at 1290-degrees-C resulted in a single crystalline S i0.74Ge0.26 layer with a thickness of 1700 angstrom. The Ge concentrat ion x of the newly formed Si1-xGex layer can be chosen by using an app ropriate implantation dose. Strain measurements by ion channeling conf irmed complete strain relaxation of the Si1-xGex layer after annealing .