MEV IN-ION IMPLANTATION FOR ELECTRICAL ISOLATION OF P-INP()

Authors
RIDGWAY MC ELLIMAN RG HAUSER N
Citation
Mc. Ridgway et al., MEV IN-ION IMPLANTATION FOR ELECTRICAL ISOLATION OF P-INP(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 835-837
Citations number
4
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
835 - 837
Database
ISI
SICI code
0168-583X(1993)80-1:<835:MIIFEI>2.0.ZU;2-X
Abstract
Electrical isolation of p+-InP by MeV In-ion implantation has been com pared with a multiple low-energy, O-ion implant sequence. The large st raggle associated with an MeV In-ion implant results in a disorder lev el of comparable uniformity to that achieved with an O-ion implant seq uence. The two implant schemes yield similar maximum sheet resistance values (approximately 6 x 10(6) OMEGA/sq) and thermal stabilities (400 -degrees-C). However, the significant process simplification inherent with a single In-ion implant is advantageous.