BURIED OXIDE LAYERS FORMED BY OXYGEN IMPLANTATION ON SCREENED OXIDE SILICON-WAFERS - STRUCTURAL-ANALYSIS

In this work the structural analysis of the buried oxide layers formed by high dose oxygen ion implantation into Si through a screen oxide l ayer and annealing has been performed by infrared absorption, X-ray ph otoelectron spectroscopy and ellipsometry measurements. The correlatio n between the measurements from the different techniques points out th e high structural quality of the buried oxide layers from the annealed structures. However, structural disorder is observed in the regions c lose to the Si/SiO2 interfaces. This is strongly dependent on the scre en oxide thickness. For the back Si/SiO2 interface, this dependence ca n be correlated with the density of Si islands in the buried oxide lay er.