HIGH-DOSE MIXED GA AS AND GA/P ION IMPLANTATIONS IN SILICON SINGLE-CRYSTALS/

High-dose mixed Ga/As and Ga/P implanted silicon single crystals annea led by RTA have been studied by a combination of RBS/channeling spectr ometry and TEM. Crystalline GaAs precipitates oriented with the host l attice were found in the silicon crystals after the ion implantations and RTA for both room temperature and high temperature Ga implantation s. The precipitates appearing in the case of P/Ga mixed implantation w ere too small to be analyzed by X-ray microanalysis but are suggested to be of crystalline GaP phase coherent to the host lattice. Only slig ht Ga atoms redistribution takes place during high temperature implant ation into the crystals containing the group-V impurities.