ION-BEAM SYNTHESIS OF TERNARY (FE1-XCOX)SI2

Authors
WIESER E PANKNIN D SKORUPA W QUERNER G HENRION W ALBRECHT J
Citation
E. Wieser et al., ION-BEAM SYNTHESIS OF TERNARY (FE1-XCOX)SI2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 867-871
Citations number
6
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
867 - 871
Database
ISI
SICI code
0168-583X(1993)80-1:<867:ISOT(>2.0.ZU;2-Y
Abstract
Ternary(Fe,Co)Si2 is formed by two step implantation on (100) Si of 4 x 10(17) Fe/CM2 and 5 or 10 x 10(16) Co/cm2 with as well as without in termediate annealing between the two implantations. The depth distribu tion of Co and Fe and its change by post implantation annealing is stu died by AES. The corresponding phase composition of the silicide layer is investigated by X-ray diffraction. Implantation with intermediate annealing enables the formation of (Fe80Co20)Si2 With the semiconducti ng beta-FeSi2 structure. The existence of the band gap was detected by IR absorption and reflection. The temperature of the phase transition from the beta to the a structure decreases with increasing Co content . This was proved by X-ray diffraction as well as by sheet resistivity measurements.