ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD

Authors
KROTZ G HELLMICH W MULLER G DERST G KALBITZER S
Citation
G. Krotz et al., ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 927-930
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
927 - 930
Database
ISI
SICI code
0168-583X(1993)80-1:<927:IDOPST>2.0.ZU;2-6
Abstract
Ion implantation doping experiments have been performed on fine-graine d, polycrystalline SiC films deposited onto insulating and optically t ransparent sapphire substrates. The efficiency of implantation doping has been found to be critically dependent on the actual implantation a nd annealing sequence. Using optimised implantation and annealing sequ ences, efficient n-type doping has been obtained after implantation of N and P impurities. Implantation of Al under the same conditions lead s to p-type doping. All films exhibit UV photoconductivity. Plasma hyd rogenation has been found to reduce the density of grain boundary defe cts in the polycrystalline SiC films.