DISORDER CREATION AND ANNEALING IN HG IMPLANTED CDTE

Citation
A. Traverse et al., DISORDER CREATION AND ANNEALING IN HG IMPLANTED CDTE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 938-942
Citations number
18
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
938 - 942
Database
ISI
SICI code
0168-583X(1993)80-1:<938:DCAAIH>2.0.ZU;2-4
Abstract
Mercury has been implanted in CdTe single crystals at room temperature and the damaging process studied by Rutherford backscattering (RBS) o f He particles in channeling conditions for increasing fluences. Altho ugh the energy deposited in nuclear collisions is large due to the hea vy mass of the implanted ion, the disordering mechanism is similar to the one observed during light ion implantation. Hence, disordering is mainly governed by CdTe characteristics rather than by nuclear collisi on parameters. The furnace annealing behavior at different temperature s has been followed. For T = 400-degrees-C during 2 hours a total dama ge recovery as characterized by RBS is reached.