X-RAY-DIFFRACTION, RUTHERFORD BACKSCATTERING AND CHANNELING MEASUREMENTS ON PB INCLUSIONS IN SI

Authors
MILANTS K HENDRICKX P PATTYN H
Citation
K. Milants et al., X-RAY-DIFFRACTION, RUTHERFORD BACKSCATTERING AND CHANNELING MEASUREMENTS ON PB INCLUSIONS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1014-1018
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
1014 - 1018
Database
ISI
SICI code
0168-583X(1993)80-1:<1014:XRBACM>2.0.ZU;2-O
Abstract
Pb inclusions have been formed in Si [111] single crystals by ion impl antation to doses of 10(15), 5 X 10(15) and 10(16) at./CM2. Combining Rutherford backscattering spectrometry (RBS), channeling and X-ray dif fraction (XRD) results, we obtain information about the pressure in th e inclusions, their epitaxy to the host lattice and the dependence of these properties on implantation dose and annealing temperature.