SURFACE-MORPHOLOGY CHANGES IN ION-IMPLANTED CHALCOGENIDE FILMS AFTER ANNEALING

Citation
T. Tsvetkova et al., SURFACE-MORPHOLOGY CHANGES IN ION-IMPLANTED CHALCOGENIDE FILMS AFTER ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1264-1267
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
1264 - 1267
Database
ISI
SICI code
0168-583X(1993)80-1:<1264:SCIICF>2.0.ZU;2-A
Abstract
Here we report some results of ion implantation and annealing effects on the surface morphology of thin amorphous films of materials in the As-Se system. Ion implantation with different gaseous ions (Ar+, N+ an d O+) and subsequent annealing have been performed leading to a change in the thin film morphology and the measured optical properties. Opti cal and electronic microscope photographs are presented showing detail s of the rippled film surface. The influence of different types of sub strates on the frost pattern formation is demonstrated and a possible mechanism for the observed effects is discussed.