THERMAL-BEHAVIOR STUDY OF SB IMPLANTED INTO PHOTORESIST FILM

Citation
Rl. Maltez et al., THERMAL-BEHAVIOR STUDY OF SB IMPLANTED INTO PHOTORESIST FILM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1316-1319
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
2
Pages
1316 - 1319
Database
ISI
SICI code
0168-583X(1993)80-1:<1316:TSOSII>2.0.ZU;2-X
Abstract
The thermal stability of Sb implanted AZ1350 photoresist films has bee n investigated via the Rutherford backscattering technique. We find th at a shallow Sb implantation raises the temperature at which the photo resist starts to decompose considerably. Comparison of the present res ults with those of Ag, Sn and Bi into the same photoresist indicates t hat not only radiation but also chemical effects have to be considered in order to explain the improvement of the photoresist thermal stabil ity.