SYNTHESIS OF ALUMINUM-OXIDE THIN-FILMS BY ION-BEAM AND VAPOR-DEPOSITION TECHNOLOGY

Aluminum oxide films were prepared by evaporation of aluminum and simu ltaneous bombardment by oxygen ions in the energy region 2-20 keV with the aluminum/oxygen transport ratio in the range 0.5-10. The films we re formed at room temperature on substrates of Si(100) wafers. Infrare d absorption spectra indicated that the structure of the films was alp ha-type and/or gamma-type, and X-ray photoelectron spectra show that t he phase structure was determined by both the Al/O transport ratio and the energy of the oxygen ion beams. As a result of the study of the c rystalline growth of the films, the X-ray diffraction pattern of the f ilm prepared by 20 keV oxygen ions and a transport ratio of 2.45 showe d a peak due to the gamma-Al2O3 crystal.