INFLUENCE OF IONIZATION PROCESSES ON RADIATION DEFECT FORMATION

Authors
ASCHERON C BIERSACK JP GOPPELTLANGER P ERXMEYER J
Citation
C. Ascheron et al., INFLUENCE OF IONIZATION PROCESSES ON RADIATION DEFECT FORMATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 3-6
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
1
Pages
3 - 6
Database
ISI
SICI code
0168-583X(1993)80-1:<3:IOIPOR>2.0.ZU;2-8
Abstract
The influences of the ionization processes in the target, and of the c harge state of the incident ions on atomic collision processes are stu died in elementary and compound semiconductors. The radiation damaging and sputtering experiments, which are presented here, suggest that io nization enhances atomic displacement processes. Charge-state-dependen t influences on nuclear and electronic processes are only observed wit hin the first few nanometers of the ion trajectory.