RANGE PARAMETERS OF AU AND CS IMPLANTED INTO BN AND SIC FILMS

Sputtering deposited BN films and directly evaporated SiC films were i mplanted with Au and Cs in the 20 to 250 keV energy range. Depth profi les of the implanted ions were obtained using the Rutherford backscatt ering technique. The experimental profiles are compared to the theoret ical predictions based on the Ziegler-Biersack-Littmark (ZBL) calculat ions via the TRIM code. As for previous measured ranges in light subst rates, our results also show deviations between experiment and theory. Our data are compared with previous results for light targets as well as with calculations involving a modified version of the TRIM code, i ncorporating inelastic effects in the nuclear stopping regime. Finally all the data are presented in the reduced range-energy (rho - epsilon ) coordinates and compared with the empirical universal relation for r anges in Si derived by Kalbitzer and Oetzmann [Radiat. Eff. 47 (1980) 57].