CHANNELING EFFECTS IN HIGH-ENERGY ION-IMPLANTATION - SI(N)

Authors
BERTI M BRUSATIN G CARNERA A GASPAROTTO A FABBRI R
Citation
M. Berti et al., CHANNELING EFFECTS IN HIGH-ENERGY ION-IMPLANTATION - SI(N), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 58-61
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
1
Pages
58 - 61
Database
ISI
SICI code
0168-583X(1993)80-1:<58:CEIHI->2.0.ZU;2-W
Abstract
Nitrogen implantation in Si single crystals in the 600-1400 keV energy range in random, [100] and [110] alignment conditions was performed. The 6 X 10(13)-2 X 10(16) fluence range was investigated. Double cryst al diffraction (DCD) and RBS-channeling analysis were performed in ord er to extract the damage profiles and the damage production rate as a function of the implanted ion fluence. A strong dependence of the dama ge on the implantation geometry has been observed and discussed.