MERCURY IMPLANTED INTO ALUMINUM - TEMPERATURE AND CONCENTRATION-DEPENDENCE OF THE SUBSTITUTIONAL COMPONENT

High substitutional fractions, f(s), with values up to 0.8 were measur ed for Hg implanted into Al single crystals at 77 K with Peak concentr ations up to 5 at.%. Annealing to 293 K leads to a decrease of f(s) fr om 0.8 to 0.29 due to the interaction of Hg with vacancies V. Implanta tion of Hg in Al at 77 K and at 293 K reveals an anomalous increase of f(s) with increasing Hg concentration. For 293 K implants, a saturati on value for f(s) of 0.29 is reached at Hg concentrations above approx imately 1 at.%. In contrast to 77 K implants, the critical angle of Hg is smaller than that of Al indicating Hg-V complex formation or coher ent precipitation. Angular scan measurements at temperatures up to 365 K did not reveal any change in the shape of the dip and f(s). At room temperature and pressure, the high dose implanted layers decompose.