PROPERTIES OF CARBON NITRIDE THIN-FILMS PREPARED BY ION AND VAPOR-DEPOSITION

Citation
Jfd. Chubaci et al., PROPERTIES OF CARBON NITRIDE THIN-FILMS PREPARED BY ION AND VAPOR-DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 463-466
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
1
Pages
463 - 466
Database
ISI
SICI code
0168-583X(1993)80-1:<463:POCNTP>2.0.ZU;2-T
Abstract
This paper reports on mechanical and optical properties of carbon nitr ide films coatings formed by the ion and vapor deposition (IVD) method . The thin films were formed by nitrogen ion bombardment and simultane ous carbon vapor deposition on substrates of fused silica and silicon (100) wafers. The energy of nitrogen ions was varied from 0.2 to 10.0 keV and the composition ratio (C/N) was varied from 5.0 to 14.0. The X -ray diffraction study indicated that the films were amorphous. The FT -IR spectra showed a small peak between 2100 and 2200 cm-1 indicating the presence of a triple bonded C-N stretching mode and the XPS ones s howed a broad peak of i-carbon with a peak-shoulder at a bonding energ y for diamondlike covalent bond. All formed films have a high hardness .