MEV IMPLANTATION INTO SEMICONDUCTORS

This paper reviews recent MeV implantation applications into semicondu ctors carried out at the Australian National University. Studies of da mage, amorphization and dynamic defect annealing in silicon and GaAs/A lGaAs multilayer structures are emphasized, but selected examples of s topping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated. The particul ar advantages for solid state studies of controlling the nuclear energ y deposition density distribution, and hence defect production, over l arge depths, are illustrated with appropriate examples.