CHANNELING AND TEM INVESTIGATIONS OF PULSE ELECTRON-BEAM ANNEALED GAAS IMPLANTED WITH PB

Authors
ALBERTS HW GAIGHER HL BREDELL LJ
Citation
Hw. Alberts et al., CHANNELING AND TEM INVESTIGATIONS OF PULSE ELECTRON-BEAM ANNEALED GAAS IMPLANTED WITH PB, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 519-522
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
1
Pages
519 - 522
Database
ISI
SICI code
0168-583X(1993)80-1:<519:CATIOP>2.0.ZU;2-L
Abstract
GaAs single crystals were implanted at room temperature with 150 keV P b ions with doses ranging from 1 x 10(12) to 5 x 10(16) ions cm-2. The amorphous surface layer of a crystal implanted with a dose of 1 x 10( 15) cm-2 was subjected to pulsed electron beam annealing (PEBA) at ene rgy densities up to 0.84 J cm-2. The damaged and recrystallized crysta ls were analyzed with backscattering and channeling of 2.0 MeV alpha-p articles. The channeling results were correlated with those obtained w ith TEM investigations.