THE EFFECT OF DEFECTS CAUSED BY XE ION-BOMBARDMENT ON THE STRUCTURE OF AU GAAS CONTACTS/

The effect of Xe ion treatment (700 keV, 10(14) Xe2+/cm2) on the inter action between Au(55 nm)/GaAs(100) was studied using RBS (Rutherford b ackscattering spectrometry) and TEM (transmission electron microscopy) . Samples were annealed rapidly in UHV with a heating rate of 150-degr ees-C/min while the evaporation of the volatile component (As) was mon itored with a mass spectrometer. Taking the evaporation vs temperature curves into account, the samples were quenched from different tempera tures. The equilibrium reaction was recently analyzed by Pecz et al. [ J. Appl. Phys. 71 (1992) 3408]. In that work, on top of flat Au(Ga) so lid solution grains a continuous layer of polycrystalline GaAs was obs erved. The purpose of the present work was to examine the role of As a nd of the created defects and to investigate the structure obtained by rapid heating.