STRAIN DISTRIBUTION IN AS-IMPLANTED AND ANNEALED (100) SI( AND SB+ ION)

Si [100] wafers were implanted with a dose of 4 X 10(15) cm-2 with 40 keV and 72 keV As+ and Sb+, respectively. Samples were isochronally an nealed at 600, 700 and 800-degrees-C for 30 min. Characterization of t he samples was made by double crystal X-ray diffractometry (DCD) and c ross-sectional transmission electron microscopy (XTEM). Lattice strain depth profiles were determined from simulation of the X-ray rocking c urves by a semikinematical model and were compared to XTEM observation s. For arsenic it was found that the well-known positive strain arisin g from the dislocation loops at the earlier amorphous/crystalline inte rface increased with increasing annealing temperature. No significant change was found for antimony. The effect of larger ion size of Sb is confirmed by a positively strained layer at about half the depth of th e regrown layer with roughly the same distribution as the distribution of the implanted antimony. In case of As, only a very small strain wa s observed at about the depth of the impurity concentration maximum. T he strain distributions obtained from the rocking curve analysis were in good agreement with the XTEM observations.