REDUCED REVERSE TEMPERATURE OF ION-BEAM-INDUCED AMORPHIZATION CRYSTALLIZATION FOR INTERMITTENT BEAM IRRADIATION OF SILICON

During ion beam bombardment a pre-existing amorphous/crystalline (a/c) interface in silicon is moved by ion beam stimulated effects such as ion beam induced interfacial amorphization (IBIIA) and ion beam induce d epitaxial crystallization (IBIEC). The occurrence of IBIIA or IBIEC depends on the dose rate of the irradiation and especially on the targ et temperature. The IBIIA/IBIEC transition takes place at the reverse temperature. For irradiation by Kr+ ions with nanosecond pulses we fou nd at a target temperature well below the reverse temperature IBIEC in stead of IBIIA. The Kr+ ions inducing the crystallization process form simultaneously a buried amorphous layer in the depth of the projected range.